Invention Grant
- Patent Title: Electronic device
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Application No.: US14514955Application Date: 2014-10-15
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Publication No.: US10049999B2Publication Date: 2018-08-14
- Inventor: Seijin Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Cha & Reiter, LLC.
- Priority: KR10-2013-0124935 20131018
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L23/14 ; H01L23/538 ; H01L25/065 ; H01L23/498

Abstract:
A semiconductor device and electronic device comprising the same includes at least one dummy chip having at least one Through Silicon Via (TSV), and at least one active chip connected to the at least one dummy chip. The at least one active chip exchanges an electrical signal through the at least one TSV. The at least one active chip may be a memory chip and a non-memory chip in a vertically stacked (3D) configuration, connected through an electrical path that includes the TSV of the dummy chip. Embodiments may include multiple memory chips and dummy chips.
Public/Granted literature
- US20150108657A1 ELECTRONIC DEVICE Public/Granted day:2015-04-23
Information query
IPC分类: