发明授权
- 专利标题: Photodiode array
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申请号: US15293784申请日: 2016-10-14
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公开(公告)号: US10050069B2公开(公告)日: 2018-08-14
- 发明人: Kazuhisa Yamamura , Kenichi Sato
- 申请人: HAMAMATSU PHOTONICS K.K.
- 申请人地址: JP Hamamatsu-shi, Shizuoka
- 专利权人: HAMAMATSU PHOTONICS K.K.
- 当前专利权人: HAMAMATSU PHOTONICS K.K.
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JPP2006-183598 20060703
- 主分类号: H01L31/107
- IPC分类号: H01L31/107 ; H01L27/144 ; H01L27/14 ; H01L27/146
摘要:
A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p−-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p−-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.
公开/授权文献
- US20170033137A1 PHOTODIODE ARRAY 公开/授权日:2017-02-02
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