- 专利标题: Acoustic wave device and method of fabricating the same
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申请号: US14945129申请日: 2015-11-18
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公开(公告)号: US10056878B2公开(公告)日: 2018-08-21
- 发明人: Kazushige Hatakeyama , Hitoshi Tsukidate , Atsushi Kawasaki
- 申请人: TAIYO YUDEN CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: TAIYO YUDEN CO., LTD.
- 当前专利权人: TAIYO YUDEN CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Chen Yoshimura LLP
- 优先权: JP2014-252114 20141212; JP2015-090682 20150427
- 主分类号: H03H9/64
- IPC分类号: H03H9/64 ; H03H9/60 ; H03H9/02 ; H03H9/72 ; H03H3/08
摘要:
An acoustic wave device includes: a substrate; a first acoustic wave resonator and a second acoustic wave resonator located on the substrate; a first wiring line electrically coupled to the first acoustic wave resonator, located on the substrate, and located between the first acoustic wave resonator and the second acoustic wave resonator; and a second wiring line electrically coupled to the second acoustic wave resonator, located on the substrate, located between the first acoustic wave resonator and the second acoustic wave resonator, having an electric potential different from an electric potential of the first wiring line, and having a thickness greater than a thickness of the first wiring line.
公开/授权文献
- US20160173060A1 ACOUSTIC WAVE DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日:2016-06-16
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