Invention Grant
- Patent Title: Pseudo dual port memory
-
Application No.: US14855319Application Date: 2015-09-15
-
Publication No.: US10061542B2Publication Date: 2018-08-28
- Inventor: Tony Chung Yiu Kwok , Nishith Nitin Desai , Changho Jung
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Arent Fox, LLP and Qualcomm Incorporated
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/419 ; G11C7/10 ; G11C7/22 ; G06F13/16

Abstract:
Aspects of a memory and method for accessing the memory are disclosed. The memory includes a plurality of memory cells configured to support a read and write operation in a memory cycle in a first mode and a write only operation in the memory cycle in a second mode. The memory further includes a control circuit configured to generate a read clock for the read operation and a write clock for the write operation. The timing of the write clock is a function of the timing of the read clock in the first mode, and the timing of the memory cycle in the second mode.
Public/Granted literature
- US20170075379A1 PSEUDO DUAL PORT MEMORY Public/Granted day:2017-03-16
Information query