Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15252158Application Date: 2016-08-30
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Publication No.: US10062627B2Publication Date: 2018-08-28
- Inventor: Masaji Iwamoto
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2016-053319 20160317
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/31 ; H01L23/00 ; H01L25/065 ; H01L23/552 ; H01L23/29
Abstract:
According to one embodiment, a semiconductor device includes a substrate, semiconductor chips mounted on the substrate, a sealing resin layer that seals the semiconductor chips, and a film covering at least an upper surface of the sealing resin layer, the film made from a material selected from the group consisting of zinc, aluminum, manganese, alloys thereof, metal oxides, metal nitrides, and metal oxynitrides.
Public/Granted literature
- US20170271231A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-09-21
Information query
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