Invention Grant
- Patent Title: Silicon germanium fins on insulator formed by lateral recrystallization
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Application No.: US15098722Application Date: 2016-04-14
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Publication No.: US10068920B2Publication Date: 2018-09-04
- Inventor: Alexander Reznicek , Veeraraghavan S. Basker , Shogo Mochizuki , Nicolas L. Breil , Oleg Gluschenkov
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/84 ; H01L21/02 ; H01L29/66 ; H01L21/3115 ; H01L21/324
Abstract:
Relaxed silicon germanium fins are formed on a bulk silicon substrate through the lateral recrystallization of molten silicon germanium having high germanium content. Following formation of the silicon germanium fins, the silicon is selectively recessed. The resulting trenches are filled with electrically insulating material and then recessed down to the bottoms of the fins.
Public/Granted literature
- US20170301697A1 SILICON GERMANIUM FINS ON INSULATOR FORMED BY LATERAL RECRYSTALLIZATION Public/Granted day:2017-10-19
Information query
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