Invention Grant
- Patent Title: Amplifiers including tunable tunnel field effect transistor pseudo resistors and related devices
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Application No.: US15358822Application Date: 2016-11-22
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Publication No.: US10069013B2Publication Date: 2018-09-04
- Inventor: Nuo Xu , Jing Wang , Woosung Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Main IPC: H03F3/187
- IPC: H03F3/187 ; H01L29/786 ; H03F1/02 ; H03F3/45 ; A61B5/0482 ; H01L29/66 ; H01L29/78 ; H01L29/739 ; H01L29/165

Abstract:
Neural signal amplifiers include an operational amplifier and a feedback network coupled between an output and an input thereof. The feedback network includes a tunnel field effect transistor (“TFET”) pseudo resistor that exhibits bi-directional conductivity. A drain region of the TFET may be electrically connected to the gate electrode thereof to provide a bi-directional resistor having good symmetry in terms of resistance as a function of voltage polarity.
Public/Granted literature
- US20170077311A1 AMPLIFIERS INCLUDING TUNABLE TUNNEL FIELD EFFECT TRANSISTOR PSEUDO RESISTORS AND RELATED DEVICES Public/Granted day:2017-03-16
Information query
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