Invention Grant
- Patent Title: Transistor
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Application No.: US14906000Application Date: 2014-07-09
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Publication No.: US10074818B2Publication Date: 2018-09-11
- Inventor: Takafumi Matsumoto , Junichi Takeya
- Applicant: Toppan Forms Co., Ltd. , Osaka University , The University of Tokyo
- Applicant Address: JP Tokyo JP Osaka JP Tokyo
- Assignee: TOPPAN FORMS CO., LTD.,OSAKA UNIVERSITY,THE UNIVERSITY OF TOKYO
- Current Assignee: TOPPAN FORMS CO., LTD.,OSAKA UNIVERSITY,THE UNIVERSITY OF TOKYO
- Current Assignee Address: JP Tokyo JP Osaka JP Tokyo
- Agency: Hoffman & Baron, LLP
- Priority: JP2013-152669 20130723; JP2014-055595 20140318
- International Application: PCT/JP2014/068316 WO 20140709
- International Announcement: WO2015/012107 WO 20150129
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L51/00 ; H01L51/10
Abstract:
The transistor includes a gate electrode, an insulating layer, a semiconductor layer, a source electrode, and a drain electrode on a substrate, in which the gate electrode is formed by using silver β-ketocarboxylate denoted by General Formula (1) described below.
Public/Granted literature
- US20160155969A1 Transistor Public/Granted day:2016-06-02
Information query
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