Invention Grant
- Patent Title: Methods of forming metallization lines on integrated circuit products and the resulting products
-
Application No.: US15285092Application Date: 2016-10-04
-
Publication No.: US10079173B2Publication Date: 2018-09-18
- Inventor: Ruilong Xie , Lars Liebmann , Daniel Chanemougame , Geng Han
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/768
- IPC: H01L29/768 ; H01L23/528 ; H01L21/768 ; H01L21/02 ; H01L29/40 ; H01L23/522
Abstract:
One illustrative method disclosed includes, among other things, forming a layer of insulating material comprising a first insulating material above a substrate and forming a metallization blocking structure in the layer of insulating material at a location that is in a path of a metallization trench to be formed in the layer of insulating material, the metallization blocking structure comprising a second insulating material that is different from the first insulating material. The method also includes forming the metallization trench in the layer of insulating material on opposite sides of the metallization blocking structure and forming a conductive metallization line in the metallization trench on opposite sides of the metallization blocking structure.
Public/Granted literature
- US20180096932A1 METHODS OF FORMING METALLIZATION LINES ON INTEGRATED CIRCUIT PRODUCTS AND THE RESULTING PRODUCTS Public/Granted day:2018-04-05
Information query
IPC分类:
