- 专利标题： Manufacture of a CdHgTe multispectral photodiode array by cadmium diffusion
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申请号： US15289577申请日： 2016-10-10
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公开(公告)号： US10079263B2公开(公告)日： 2018-09-18
- 发明人: Florent Rochette
- 申请人： Commissariat a L'Energie Atomique et aux Energies Alternatives
- 申请人地址： FR Paris
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人地址： FR Paris
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： FR1502136 20151012
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L31/101 ; H01L31/103 ; H01L31/18
摘要：
A method for manufacturing a multi-spectral photodiode array in a CdxHg1-xTe semiconductor layer constituted of pixels, the method including a step of producing a PN junction in each pixel and further includes producing a cadmium-rich structure on the semiconductor layer, structured so that all the pixels are not surmounted by a same quantity of cadmium atoms, this quantity being able to be zero; and inter-diffusion annealing, realizing the diffusion of cadmium atoms from the cadmium-rich structure to the semiconductor layer. Pixels that do not all have the same cutoff wavelength are thereby obtained.