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公开(公告)号:US10566366B2
公开(公告)日:2020-02-18
申请号:US15777722
申请日:2016-11-25
发明人: Johan Rothman , Florent Rochette
IPC分类号: H01L27/146
摘要: A photodetection device including a diode array and a method for production thereof. In the device, each diode of the array includes an absorption region having a first bandgap energy and a collection region having a first doping type, and adjacent diodes in a network are separated by a trench including sides and a bottom. The bottom and sides of the trench form a stabilization layer having a second doping type, opposite the first doping type, and a bandgap energy greater than the first bandgap energy of the absorption regions.
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2.
公开(公告)号:US11476380B2
公开(公告)日:2022-10-18
申请号:US17218468
申请日:2021-03-31
发明人: Clément Lobre , Florent Rochette
IPC分类号: H01L27/14 , H01L31/103 , H01L31/0216 , H01L31/0296 , H01L31/18
摘要: Photo-detection device (100) including a semiconductor substrate (110) made of CdxHg1-xTe, with an N-doped region (120), a P-doped region (130), and a concentrated casing (150) only located in the P-doped region and having an average cadmium concentration greater than the average cadmium concentration in the N-doped region.
According to the invention, the concentrated casing (150) has a cadmium concentration gradient, defining therein at least one intermediate gap zone (151) and at least one high gap zone (152), and the intermediate gap zone (151) is in direct physical contact with an electrical contact block (170).
A significant reduction in the dark current and an optimal charge carrier collection are thus combined.-
公开(公告)号:US10079263B2
公开(公告)日:2018-09-18
申请号:US15289577
申请日:2016-10-10
发明人: Florent Rochette
IPC分类号: H01L27/146 , H01L31/101 , H01L31/103 , H01L31/18
CPC分类号: H01L27/14696 , H01L27/1461 , H01L27/14649 , H01L27/14698 , H01L31/1013 , H01L31/1032 , H01L31/1832
摘要: A method for manufacturing a multi-spectral photodiode array in a CdxHg1-xTe semiconductor layer constituted of pixels, the method including a step of producing a PN junction in each pixel and further includes producing a cadmium-rich structure on the semiconductor layer, structured so that all the pixels are not surmounted by a same quantity of cadmium atoms, this quantity being able to be zero; and inter-diffusion annealing, realizing the diffusion of cadmium atoms from the cadmium-rich structure to the semiconductor layer. Pixels that do not all have the same cutoff wavelength are thereby obtained.
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