Invention Grant
- Patent Title: Semiconductor device and method for manufacturing thereof
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Application No.: US14629575Application Date: 2015-02-24
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Publication No.: US10079295B2Publication Date: 2018-09-18
- Inventor: Atsuo Isobe , Toshinari Sasaki , Shinya Sasagawa , Akihiro Ishizuka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2011-096298 20110422
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/06 ; H01L27/12 ; H01L29/786 ; H01L29/423 ; H01L21/02
Abstract:
A method for manufacturing an oxide semiconductor layer, comprising forming an oxide semiconductor layer over an insulating layer so as to be along with a curved surface of a projecting structural body of the insulating layer, wherein a length of the projecting structural body in a height direction is larger than a width of the projecting structural body, is provided.
Public/Granted literature
- US20150179776A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2015-06-25
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