Invention Grant
- Patent Title: Metal-doped graphene and growth method of the same
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Application No.: US15202582Application Date: 2016-07-06
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Publication No.: US10079392B2Publication Date: 2018-09-18
- Inventor: Kun-Ping Huang , Yu-Wen Chi
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW105106978A 20160308
- Main IPC: H01M4/86
- IPC: H01M4/86 ; H01G11/86 ; H01M4/90 ; H01M4/80 ; H01M4/92 ; H01G11/36 ; C23C16/511 ; H01M4/88 ; C23C16/26

Abstract:
A metal-doped graphene and a growth method of the same are provided. The metal-doped graphene includes graphene and metal elements, wherein the metal elements accounts for 1-30 at % based on the total content of the metal-doped graphene. The growth method includes performing a PECVD by using a carbon precursor, a metal precursor, and a group VI precursor in order to grow the metal-doped graphene.
Public/Granted literature
- US20170263940A1 METAL-DOPED GRAPHENE AND GROWTH METHOD OF THE SAME Public/Granted day:2017-09-14
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