Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15925050Application Date: 2018-03-19
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Publication No.: US10083870B2Publication Date: 2018-09-25
- Inventor: Takahiro Ohori , Ayanori Ikoshi , Hiroto Yamagiwa , Manabu Yanagihara
- Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-187370 20150924
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/8232 ; H01L27/06 ; H01L27/095 ; H01L27/098 ; H01L29/872 ; H01L29/808 ; H01L29/812 ; H01L29/868 ; H01L29/778 ; H01L29/747 ; H01L29/861

Abstract:
A semiconductor device includes: a first bidirectional switch element including a first gate electrode, a second gate electrode, a first electrode, and a second electrode; a first field-effect transistor including a third gate electrode, a third electrode, and a fourth electrode; and a second field-effect transistor including a fourth gate electrode, a fifth electrode, and a sixth electrode. The first electrode is electrically connected to the third gate electrode, the first gate electrode is electrically connected to the third electrode, the second electrode is electrically connected to the fourth gate electrode, the second gate electrode is electrically connected to the fifth electrode, and the fourth electrode is electrically connected to the sixth electrode.
Public/Granted literature
- US20180211878A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-07-26
Information query
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