- 专利标题： Double diffusion break gate structure without vestigial antenna capacitance
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申请号： US15812249申请日： 2017-11-14
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公开(公告)号： US10083964B1公开(公告)日： 2018-09-25
- 发明人: Alexander Reznicek , Sivananda Kanakasabapathy
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Daniel P. Morris, Esq.
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L29/06 ; H01L21/3065 ; H01L21/225 ; H01L21/02 ; H01L21/762 ; H01L21/8238 ; H01L29/66 ; H01L21/308
摘要：
A double diffusion break (DDB) gate structure is provided by removing the vestigial antenna to provide a space and the space is filled, at least in part, with an interlevel dielectric (ILD) material. Removal of the vestigial antenna from the DDB gate structure will reduce the device capacitance and improve device performance, while enabling DDB in tight integration schemes.