Invention Grant
- Patent Title: Method for manufacturing light emitting element
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Application No.: US15471244Application Date: 2017-03-28
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Publication No.: US10084108B2Publication Date: 2018-09-25
- Inventor: Hiroaki Tamemoto , Chihiro Juasa
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Priority: JP2013-177789 20130829
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L33/00 ; H01L33/22 ; H01L33/32 ; H01L33/20

Abstract:
A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a regular triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.
Public/Granted literature
- US20170200855A1 METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT Public/Granted day:2017-07-13
Information query
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