Invention Grant
- Patent Title: Thin film material residual stress testing structure and method
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Application No.: US15104095Application Date: 2015-05-05
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Publication No.: US10088375B2Publication Date: 2018-10-02
- Inventor: Weihua Li , Lei Wang , Lu Zhang , Zaifa Zhou
- Applicant: Southeast University
- Applicant Address: CN Nanjing
- Assignee: Southeast University
- Current Assignee: Southeast University
- Current Assignee Address: CN Nanjing
- Agency: Greenberg Traurig, LLP
- Priority: CN201410243181 20140603
- International Application: PCT/CN2015/078243 WO 20150505
- International Announcement: WO2015/184946 WO 20151210
- Main IPC: G01L1/00
- IPC: G01L1/00 ; G01L1/08 ; G01L5/00 ; H01L21/66

Abstract:
A thin film material residual testing structure comprises two groups of structures. The first group of structures comprises an electrostatic driven polysilicon cantilever beam, an asymmetrical cross beam made of thin film material to be tested and having an alignment structure, and a double-end fixed support beam made of the thin film material to be tested. The second group of structures is similar to the structure of the first group with the fixed support beam removed. A residual stress testing method includes separating the loading drive part of force from a residual stress testing structure made of the thin film material to be tested, designing the bending deflection of a control testing structure according to geometrical parameters, extracting the force applied on the residual stress testing structure and utilizing force and deflection to calculate the residual stress of the thin film material to be tested.
Public/Granted literature
- US20180164164A1 THIN FILM MATERIAL RESIDUAL STRESS TESTING STRUCTURE AND METHOD Public/Granted day:2018-06-14
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