- 专利标题： Memory device having negative voltage generator
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申请号： US15465999申请日： 2017-03-22
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公开(公告)号： US10090055B2公开(公告)日： 2018-10-02
- 发明人: Tae Heui Kwon
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2016-0090133 20160715
- 主分类号： G05F1/10
- IPC分类号： G05F1/10 ; G11C16/26 ; G11C16/10 ; G11C16/08
摘要：
Provided herein is a voltage generating circuit including: a negative voltage pump configured to generate a first negative voltage; and a negative voltage regulator configured to generate a second negative voltage using the first negative voltage and output the second negative voltage through an output terminal. The negative voltage regulator includes a first amplifier circuit configured to be controlled by a voltage of the output terminal, and a voltage booster configured to increase a voltage of the output terminal depending on an output voltage of the first amplifier circuit.
公开/授权文献
- US20180019015A1 MEMORY DEVICE HAVING NEGATIVE VOLTAGE GENERATOR 公开/授权日：2018-01-18
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