- 专利标题： Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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申请号： US15415032申请日： 2017-01-25
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公开(公告)号： US10090152B2公开(公告)日： 2018-10-02
- 发明人: Yugo Orihashi , Atsushi Moriya
- 申请人： HITACHI KOKUSAI ELECTRIC INC.
- 申请人地址： JP Tokyo
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址： JP Tokyo
- 代理机构： Volpe and Koenig, P.C.
- 优先权： JP2016-016418 20160129
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C23C16/52 ; C23C16/455 ; H01L21/67 ; H01L27/108 ; H01L27/11582 ; H01L29/167 ; C23C16/04 ; C23C16/24
摘要：
There is provided a method of manufacturing a semiconductor device, which includes: forming a seed layer doped with a dopant on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a halogen-based first process gas to the substrate, supplying a non-halogen-based second process gas to the substrate, and supplying a dopant gas to the substrate; and supplying a third process gas to the substrate to form a film on the seed layer.
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