Invention Grant
- Patent Title: NAND memory array with mismatched cell and bitline pitch
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Application No.: US15582220Application Date: 2017-04-28
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Publication No.: US10090313B2Publication Date: 2018-10-02
- Inventor: Zengtao Liu
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law PC
- Main IPC: H01L27/11565
- IPC: H01L27/11565 ; H01L27/1157 ; H01L27/11573 ; H01L27/11582

Abstract:
Embodiments of the present disclosure describe methods, apparatus, and system configurations for NAND memory arrays with mismatched cell and bitline pitch. Other embodiments may be described and claimed. The bitline pitch is the distance between bitlines. The cell pitch is the distance between cells. The mismatch is bitline spacing that is different from cell spacing.
Public/Granted literature
- US20170236832A1 NAND MEMORY ARRAY WITH MISMATCHED CELL AND BITLINE PITCH Public/Granted day:2017-08-17
Information query
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