Invention Grant
- Patent Title: Laser diode enhancement device
-
Application No.: US15411581Application Date: 2017-01-20
-
Publication No.: US10090639B2Publication Date: 2018-10-02
- Inventor: Alkan Gulses , Russell Kurtz
- Applicant: LUMINIT LLC
- Applicant Address: US CA Torrance
- Assignee: Luminit LLC
- Current Assignee: Luminit LLC
- Current Assignee Address: US CA Torrance
- Agency: Husch Blackwell LLP
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/062 ; H01S5/343 ; H01S5/183 ; H01S5/14 ; H01S3/08 ; H01S5/04 ; H01S3/10
Abstract:
The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InGaAs. The CGH is composed of AlGaAs.
Public/Granted literature
- US20170227700A1 LASER DIODE ENHANCEMENT DEVICE Public/Granted day:2017-08-10
Information query
