- 专利标题： Composition for forming a silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer
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申请号： US14842632申请日： 2015-09-01
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公开(公告)号： US10093830B2公开(公告)日： 2018-10-09
- 发明人: Wan-Hee Lim , Taek-Soo Kwak , Han-Song Lee , Eun-Su Park , Sun-Hae Kang , Bo-Sun Kim , Sang-Kyun Kim , Sae-Mi Park , Jin-Hee Bae , Jin-Woo Seo , Jun-Young Jang , Youn-Jin Cho , Kwen-Woo Han , Byeong-Gyu Hwang
- 申请人： SAMSUNG SDI CO., LTD.
- 申请人地址： KR Yongin-si
- 专利权人： Samsung SDI Co., Ltd.
- 当前专利权人： Samsung SDI Co., Ltd.
- 当前专利权人地址： KR Yongin-si
- 代理机构： Lewis Roca Rothgerber Christie LLP
- 优先权： KR10-2014-0184766 20141219
- 主分类号： C09D103/14
- IPC分类号： C09D103/14 ; C09D183/14 ; C08K5/01 ; C09D183/16 ; C08G77/54 ; C08G77/62
摘要：
A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.
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