公开(公告)号：US09957418B2

公开(公告)日：2018-05-01

申请号：US14967102

申请日：2015-12-11

申请人： SAMSUNG SDI CO., LTD.

发明人： Eun-Seon Lee ,  Woo-Han Kim ,  Hui-Chan Yun ,  Jin-Hee Bae ,  Byeong-Gyu Hwang

IPC分类号： H01L21/02 ,  C09D183/16 ,  H01B3/46 ,  C08G77/62

CPC分类号： C09D183/16 ,  C08G77/62 ,  H01B3/46

摘要： A composition for forming a silica layer includes a silicon-containing polymer and a solvent, wherein the silicon-containing polymer has a total sum of Si—H integral values in a 1H-NMR spectrum of less than or equal to about 12.The sum of the Si—H integral values is calculated under conditions described in the specification.

公开(公告)号：US10020185B2

公开(公告)日：2018-07-10

申请号：US14720674

申请日：2015-05-22

申请人： SAMSUNG SDI CO., LTD.

发明人： Hui-Chan Yun ,  Woo-Han Kim ,  Sang-Ran Koh ,  Taek-Soo Kwak ,  Bo-Sun Kim ,  Jin-Gyo Kim ,  Yoong-Hee Na ,  Kun-Bae Noh ,  Sae-Mi Park ,  Jin-Hee Bae ,  Jun Sakong ,  Eun-Seon Lee ,  Wan-Hee Lim ,  Jun-Young Jang ,  Il Jung ,  Byeong-Gyu Hwang

IPC分类号： H01L21/469 ,  H01L21/02 ,  C01B33/12 ,  C09D1/00 ,  H01L29/06

CPC分类号： H01L21/02222 ,  C01B33/12 ,  C09D1/00 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02282 ,  H01L29/0649

摘要： A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

公开(公告)号：US10017646B2

公开(公告)日：2018-07-10

申请号：US15656341

申请日：2017-07-21

申请人： SAMSUNG SDI CO., LTD.

发明人： Sooyeon Sim ,  Jin-Hee Bae ,  TaekSoo Kwak ,  Yonggoog Kim ,  Jingyo Kim ,  Kunbae Noh ,  Huichan Yun ,  Jiho Lee ,  Byeong Gyu Hwang

IPC分类号： C01B33/12 ,  C09D1/00 ,  C09D7/00 ,  C09D7/12 ,  H01L21/02

CPC分类号： C09D1/00 ,  C01B33/12 ,  C09D7/20 ,  C09D7/63 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318

摘要： A composition for forming silica layer includes a silicon-containing polymer and a solvent, wherein a weight average molecular weight of the silicon-containing polymer ranges from about 2,000 to about 100,000 and a branching ratio (a) of the silicon-containing polymer calculated by Equation 1 ranges from about 0.25 to about 0.50. η=k·Ma  [Equation 1] In Equation 1, η is an intrinsic viscosity of a silicon-containing polymer, M is an absolute molecular weight of a silicon-containing polymer, a is a branching ratio, and k is an intrinsic constant.

公开(公告)号：US09721785B2

公开(公告)日：2017-08-01

申请号：US15178378

申请日：2016-06-09

申请人： SAMSUNG SDI CO., LTD.

发明人： Jiho Lee ,  Kunbae Noh ,  Huichan Yun ,  Jin-Hee Bae ,  Wanhee Lim

IPC分类号： H01L21/31 ,  H01L21/02

CPC分类号： H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02307 ,  H01L21/02337

摘要： A method of manufacturing a silica layer includes: coating a pre-wetting liquid material including a carbon compound on a substrate; coating a composition for forming a silica layer on the substrate coated with the pre-wetting liquid material; and curing a substrate coated with the composition for forming a silica layer.

公开(公告)号：US20160099145A1

公开(公告)日：2016-04-07

申请号：US14720674

申请日：2015-05-22

申请人： SAMSUNG SDI CO., LTD.

发明人： Hui-Chan Yun ,  Woo-Han Kim ,  Sang-Ran Koh ,  Taek-Soo Kwak ,  Bo-Sun Kim ,  Jin-Gyo Kim ,  Yoong-Hee Na ,  Kun-Bae Noh ,  Sae-Mi Park ,  Jin-Hee Bae ,  Jun Sakong ,  Eun-Seon Lee ,  Wan-Hee Lim ,  Jun-Young Jang ,  Il Jung ,  Byeong-Gyu Hwang

IPC分类号： H01L21/02 ,  C01B33/12 ,  C09D1/00 ,  H01L29/06

CPC分类号： H01L21/02222 ,  C01B33/12 ,  C09D1/00 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02282 ,  H01L29/0649

摘要： A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

摘要翻译： 一种用于形成二氧化硅层的组合物，其包含重均分子量为约20,000至约70,000且多分散指数为约5.0至约17.0的含硅聚合物和溶剂; 使用其制造的二氧化硅层; 以及包括二氧化硅层的电子器件。

公开(公告)号：US11201052B2

公开(公告)日：2021-12-14

申请号：US16874820

申请日：2020-05-15

申请人： Samsung SDI Co., Ltd.

发明人： Seungwoo Jang ,  Taeksoo Kwak ,  Jin-Hee Bae ,  Hyeonsu Jo ,  Euihyun Kim ,  Kunbae Noh ,  Jun Sakong ,  Chungheon Lee ,  Wanhee Lim ,  Byeonggyu Hwang

IPC分类号： H01L21/02 ,  C01B21/087 ,  C01B33/12 ,  H01L27/108

摘要： Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an 1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl3, when a peak derived from N3SiH1 and N2SiH2 is referred to as Peak 1 and a peak derived from NSiH3 is referred to as Peak 2, a ratio (P1/(P1+P2)) of an area (P1) of Peak 1 relative to a total area (P1+P2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (PA/PB) of an area (PA) of Region A relative to an area (PB) of Region B is greater than or equal to about 1.5.

公开(公告)号：US10804095B2

公开(公告)日：2020-10-13

申请号：US16163170

申请日：2018-10-17

申请人： Samsung SDI Co., Ltd.

发明人： Jin-Hee Bae ,  Taeksoo Kwak ,  Byeonggyu Hwang ,  Kunbae Noh ,  Jun Sakong ,  Jinwoo Seo ,  Junyoung Jang

IPC分类号： H01L21/02 ,  C01B21/068 ,  C09D183/16 ,  C08G77/62

摘要： A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)−(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 Å on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).

公开(公告)号：US10427944B2

公开(公告)日：2019-10-01

申请号：US14839642

申请日：2015-08-28

申请人： SAMSUNG SDI CO., LTD.

发明人： Jun-Young Jang ,  Taek-Soo Kwak ,  Woo-Han Kim ,  Hui-Chan Yun ,  Jin-Hee Bae ,  Bo-Sun Kim ,  Yoong-Hee Na ,  Sae-Mi Park ,  Han-Song Lee ,  Wan-Hee Lim

IPC分类号： C01B33/12 ,  C09D183/16 ,  H01L21/02 ,  C08G77/62

摘要： A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25° C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

公开(公告)号：US11518909B2

公开(公告)日：2022-12-06

申请号：US16645343

申请日：2018-02-13

申请人： Samsung SDI Co., Ltd.

发明人： Kunbae Noh ,  Taeksoo Kwak ,  Junyoung Jang ,  Yoonyoung Koo ,  Yonggoog Kim ,  Jingyo Kim ,  Jin-Hee Bae ,  Jun Sakong ,  Jinwoo Seo ,  Sooyeon Sim ,  Huichan Yun ,  Jiho Lee ,  Kwen-Woo Han ,  Byeong Gyu Hwang

IPC分类号： C09D183/16 ,  H01L21/02 ,  H01L21/306

摘要： Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

公开(公告)号：US10153171B2

公开(公告)日：2018-12-11

申请号：US15704054

申请日：2017-09-14

申请人： SAMSUNG SDI CO., LTD.

发明人： Huichan Yun ,  TaekSoo Kwak ,  Jin-Hee Bae ,  Jinwoo Seo ,  Kunbae Noh ,  Junyoung Jang

IPC分类号： H01L21/308 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/311

摘要： A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an etching subject layer on a substrate, forming a first layer on the etching subject layer such that the first layer has a projecting pattern, forming a second layer such that the second layer completely covers the projecting pattern of the first layer, partially removing the second layer such that a top of the projecting pattern is exposed and a patterned second layer remains at a side of the projecting pattern, removing the first layer such that a top of the etching subject layer is exposed, and etching the etching subject layer using the patterned second layer as an etching mask, wherein one of the first layer and the second layer is a carbon-containing layer and the other is a silicon-containing layer, and the silicon-containing layer is formed by coating a silicon-containing composition and heat-treating the same.