Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15704049Application Date: 2017-09-14
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Publication No.: US10096546B2Publication Date: 2018-10-09
- Inventor: Changseop Yoon , Kwangsub Yoon , Jongmil Youn , Hyung Jong Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2015-0046274 20150401
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/8238 ; H01L29/06 ; H01L27/02 ; H01L23/485

Abstract:
A semiconductor device includes a substrate including PMOSFET and NMOSFET regions, a first gate structure extending in a first direction and crossing the PMOSFET and NMOSFET regions, and a gate contact on and connected to the first gate structure, the gate contact being between the PMOSFET and NMOSFET regions, the gate contact including a first sub contact in contact with a top surface of the first gate structure, the first sub contact including a vertical extending portion extending vertically toward the substrate along one sidewall of the first gate structure, and a second sub contact spaced apart from the first gate structure, a top surface of the second sub contact being positioned at a same level as a top surface of the first sub contact.
Public/Granted literature
- US20180005943A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-01-04
Information query
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