Invention Grant
- Patent Title: Method for producing a power semiconductor module
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Application No.: US15337733Application Date: 2016-10-28
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Publication No.: US10096584B2Publication Date: 2018-10-09
- Inventor: Olaf Hohlfeld , Guido Boenig , Irmgard Escher-Poeppel , Edward Fuergut , Martin Gruber , Thorsten Meyer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015118664 20151030
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L25/00 ; H01L21/50 ; H01L21/56 ; H01L23/14 ; H01L23/31 ; H01L23/538 ; H01L23/00 ; H01L25/065 ; H01L25/07 ; H01L21/60

Abstract:
In order to produce a power semiconductor module, a circuit carrier is populated with a semiconductor chip and with an electrically conductive contact element. After populating, the semiconductor chip and the contact element are embedded into a dielectric embedding compound, and the contact element is exposed. In addition, an electrically conductive base layer is produced which electrically contacts the exposed contact element and which bears on the embedding compound and the exposed contact element. A prefabricated metal film is applied to the base layer by means of an electrically conductive connection layer.
Public/Granted literature
- US20170125395A1 Method for Producing a Power Semiconductor Module Public/Granted day:2017-05-04
Information query
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