An embodiment of a transistor has a semiconductor fin, a dielectric over the semiconductor fin, a control gate over the dielectric, and source/drains in the semiconductor fin and having upper surfaces below an uppermost surface of the semiconductor fin. Another embodiment of a transistor has first and second semiconductor fins, a first source/drain region in the first semiconductor fin and extending downward from an uppermost surface of the first semiconductor fin, a second source/drain region in the second semiconductor fin and extending downward from an uppermost surface of the second semiconductor fin, a dielectric between the first and second semiconductor fins and adjacent to sidewalls of the first and second semiconductor fins, and a control gate over the dielectric and between the first and second semiconductor fins and extending to a level below upper surfaces of the first and second source/drain regions.