- 专利标题: Imaging low electron yield regions with a charged beam imager
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申请号: US14795877申请日: 2015-07-09
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公开(公告)号: US10103005B2公开(公告)日: 2018-10-16
- 发明人: Yuval Gronau , Ishai Schwarzband , Barak Dee-Noor
- 申请人: Applied Materials Israel Ltd.
- 申请人地址: IL Rehovot
- 专利权人: Applied Materials Israel Ltd.
- 当前专利权人: Applied Materials Israel Ltd.
- 当前专利权人地址: IL Rehovot
- 代理机构: Lowenstein Sandler LLP
- 主分类号: H04N7/18
- IPC分类号: H04N7/18 ; H01J37/22 ; H01J37/26 ; H01J37/28 ; G06T7/00
摘要:
Disclosed herein are a system and method for imaging low electron yield regions with a charged beam imager. In certain embodiments, a system may include a processor, wherein the processor comprise an image waveform finder, a synthetic image generator and an output image generator; wherein the processor is configured to (i) receive or generate multiple images of a region of the object; wherein the region has an electron yield that is below an electron yield threshold; (ii) process the multiple images to generate multiple synthetic images, and (iii) generate an output image of the region in response to the multiple synthetic images.
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