Invention Grant
- Patent Title: Imaging low electron yield regions with a charged beam imager
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Application No.: US14795877Application Date: 2015-07-09
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Publication No.: US10103005B2Publication Date: 2018-10-16
- Inventor: Yuval Gronau , Ishai Schwarzband , Barak Dee-Noor
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: H04N7/18
- IPC: H04N7/18 ; H01J37/22 ; H01J37/26 ; H01J37/28 ; G06T7/00

Abstract:
Disclosed herein are a system and method for imaging low electron yield regions with a charged beam imager. In certain embodiments, a system may include a processor, wherein the processor comprise an image waveform finder, a synthetic image generator and an output image generator; wherein the processor is configured to (i) receive or generate multiple images of a region of the object; wherein the region has an electron yield that is below an electron yield threshold; (ii) process the multiple images to generate multiple synthetic images, and (iii) generate an output image of the region in response to the multiple synthetic images.
Public/Granted literature
- US20170011881A1 IMAGING LOW ELECTRON YIELD REGIONS WITH A CHARGED BEAM IMAGER Public/Granted day:2017-01-12
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