Invention Grant
- Patent Title: Semiconductor devices and processing methods
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Application No.: US15455158Application Date: 2017-03-10
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Publication No.: US10103123B2Publication Date: 2018-10-16
- Inventor: Michael Rogalli , Wolfgang Lehnert
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner mbB
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L23/00
Abstract:
Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.
Public/Granted literature
- US20170236801A1 SEMICONDUCTOR DEVICES AND PROCESSING METHODS Public/Granted day:2017-08-17
Information query
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