摘要:
According to one embodiment, a method for processing a semiconductor device is provided including forming a final metal layer forming a passivation layer over the final metal layer and structuring the passivation layer and the final metal layer to form a patterned metal layer and a patterned passivation layer, wherein the patterned metal layer includes a pad region covered by the patterned passivation layer.
摘要:
A method of forming an aluminum oxide layer is provided. The method includes providing a metal surface including at least one metal of a group of metals, the group of metals consisting of copper, aluminum, palladium, nickel, silver, and alloys thereof. The method further includes depositing an aluminum oxide layer on the metal surface by atomic layer deposition, wherein a maximum processing temperature during the depositing is 280° C., such that the aluminum oxide layer is formed with a surface having a liquid solder contact angle of less than 40°.
摘要:
A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.
摘要:
A method of forming an aluminum oxide layer is provided. The method includes providing a metal surface including at least one metal of a group of metals, the group of metals consisting of copper, aluminum, palladium, nickel, silver, and alloys thereof. The method further includes depositing an aluminum oxide layer on the metal surface by atomic layer deposition, wherein a maximum processing temperature during the depositing is 280° C., such that the aluminum oxide layer is formed with a surface having a liquid solder contact angle of less than 40°.
摘要:
Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.
摘要:
According to one embodiment, a method for processing a semiconductor device is provided including forming a final metal layer forming a passivation layer over the final metal layer and structuring the passivation layer and the final metal layer to form a patterned metal layer and a patterned passivation layer, wherein the patterned metal layer includes a pad region covered by the patterned passivation layer.
摘要:
Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.
摘要:
Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.
摘要:
A package includes an electronic chip having a pad. The pad is at least partially covered with adhesion enhancing structures. The pad and the adhesion enhancing structures have at least aluminium in common.
摘要:
A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.