- 专利标题: Apparatus having a memory cell and a shunt device
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申请号: US15320788申请日: 2014-07-30
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公开(公告)号: US10109346B2公开(公告)日: 2018-10-23
- 发明人: Hans S. Cho , Gary Gibson , Brent Buchanan
- 申请人: Hewlett Packard Enterprise Development LP
- 申请人地址: US TX Houston
- 专利权人: Hewlett Packard Enterprise Development LP
- 当前专利权人: Hewlett Packard Enterprise Development LP
- 当前专利权人地址: US TX Houston
- 代理机构: Mannava & Kang, P.C.
- 国际申请: PCT/US2014/048918 WO 20140730
- 国际公布: WO2016/018313 WO 20160204
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C13/00 ; H01L27/24 ; H01L45/00
摘要:
According to an example, an apparatus may include an input line, an output line, and a memory cell connected between the input line and the output line. The memory cell may include a memristor connected in series with a selector. The apparatus may also include a shunt device connected to the input line, in which the shunt device is to divert a portion of current away from the memory cell in response to a voltage at the input line being greater than a threshold voltage.
公开/授权文献
- US20170200495A1 APPARATUS HAVING A MEMORY CELL AND A SHUNT DEVICE 公开/授权日:2017-07-13
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