- Patent Title: Coil filament for plasma enhanced chemical vapor deposition source
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Application No.: US15533265Application Date: 2015-11-20
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Publication No.: US10109465B2Publication Date: 2018-10-23
- Inventor: Romulo Ata , ZhaoHui Fan , Samuel Tanaka , Christopher Platt , Xiaoding Ma
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Cupertino
- Agency: Westman, Champlin & Koehler, P.A.
- International Application: PCT/US2015/061756 WO 20151120
- International Announcement: WO2016/089620 WO 20160609
- Main IPC: H01J1/94
- IPC: H01J1/94 ; H01J37/32 ; H01K1/18 ; C23C16/26 ; C23C16/50

Abstract:
A vapor deposition source that includes a substantially vertical plate to which first and second filament posts are coupled. The vapor deposition source also includes a filament having a first end and a second end. The filament provides a substantially concentric source of electrons. The first end of the filament is connected to the first filament post and the second end of the filament is connected to the second filament post. The first end of the filament is substantially vertically aligned with the second end of the filament when the filament is connected to the first and second posts.
Public/Granted literature
- US20170365448A1 COIL FILAMENT FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SOURCE Public/Granted day:2017-12-21
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