Invention Grant
- Patent Title: Heterojunction bipolar transistor unit cell and power stage for a power amplifier
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Application No.: US15614471Application Date: 2017-06-05
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Publication No.: US10109724B2Publication Date: 2018-10-23
- Inventor: Gengming Tao , Bin Yang , Xia Li , Miguel Miranda Corbalan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/737 ; H01L29/08 ; H01L29/10 ; H01L29/66 ; H01L29/06
Abstract:
A heterojunction bipolar transistor unit cell may include a compound semiconductor substrate. The heterojunction bipolar transistor unity may also include a base mesa on the compound semiconductor substrate. The base mesa may include a collector region on the compound semiconductor substrate and a base region on the collector region. The heterojunction bipolar transistor unity may further include a single emitter mesa on the base mesa.
Public/Granted literature
- US20180240898A1 HETEROJUNCTION BIPOLAR TRANSISTOR UNIT CELL AND POWER STAGE FOR A POWER AMPLIFIER Public/Granted day:2018-08-23
Information query
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