- 专利标题: Method of manufacturing a semiconductor component and semiconductor component
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申请号: US14757589申请日: 2015-12-23
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公开(公告)号: US10121690B2公开(公告)日: 2018-11-06
- 发明人: Georg Meyer-Berg , Edward Fuergut , Joachim Mahler
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 优先权: DE102014119620 20141223
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/683 ; H01L23/00 ; H01L21/56 ; H01L23/31
摘要:
Various embodiments provide method of manufacturing a semiconductor component, wherein the method comprises providing a layer stack comprising a carrier and a thinned wafer comprising a metallization layer on one side, wherein the thinned wafer is placed on a first side of the carrier; forming an encapsulation encapsulating the layer stack at least partially; and subsequently thinning the carrier from a second side of the carrier, wherein the second side is opposite to the first side of the carrier.
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