- 专利标题： Conductive pillar structure
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申请号： US12904506申请日： 2010-10-14
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公开(公告)号： US10128206B2公开(公告)日： 2018-11-13
- 发明人: Chih-Wei Lin , Ming-Da Cheng , Wen-Hsiung Lu , Meng-Wei Chou , Hung-Jui Kuo , Chung-Shi Liu
- 申请人： Chih-Wei Lin , Ming-Da Cheng , Wen-Hsiung Lu , Meng-Wei Chou , Hung-Jui Kuo , Chung-Shi Liu
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/48 ; H01L23/00
摘要：
The invention relates to a bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a contact pad over the substrate; a passivation layer extending over the substrate having an opening over the contact pad; and a conductive pillar over the opening of the passivation layer, wherein the conductive pillar comprises an upper portion substantially perpendicular to a surface of the substrate and a lower portion having tapered sidewalls.
公开/授权文献
- US20120091574A1 CONDUCTIVE PILLAR STRUCTURE 公开/授权日：2012-04-19
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