- 专利标题: Semiconductor devices and methods for manufacturing the same
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申请号: US15009119申请日: 2016-01-28
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公开(公告)号: US10128336B2公开(公告)日: 2018-11-13
- 发明人: Sangjine Park , Boun Yoon , Jeongnam Han
- 申请人: Sangjine Park , Boun Yoon , Jeongnam Han
- 申请人地址: KR Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2010-0097922 20101007
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L29/08 ; H01L21/8234 ; H01L29/78 ; H01L23/535 ; H01L29/16 ; H01L29/165 ; H01L29/45 ; H01L29/417
摘要:
Semiconductor devices and methods of manufacturing semiconductor devices. A semiconductor device includes a metal gate electrode stacked on a semiconductor substrate with a gate insulation layer disposed therebetween, spacer structures disposed on the semiconductor substrate at both sides of the metal gate electrode, source/drain regions formed in the semiconductor substrate at the both sides of the metal gate electrode, and an etch stop pattern including a bottom portion covering the source/drain regions and a sidewall portion extended from the bottom portion to cover a portion of sidewalls of the spacer structures, in which an upper surface of the sidewall portion of the etch stop pattern is positioned under an upper surface of the metal gate electrode.