Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15644877Application Date: 2017-07-10
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Publication No.: US10134740B2Publication Date: 2018-11-20
- Inventor: Dong Wan Kim , Ji Hun Kim , Jae Joon Song , Hiroshi Takeda , Jung Hoon Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2016-0153726 20161118
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/423 ; H01L29/49 ; H01L29/06 ; H01L23/528 ; H01L21/28 ; H01L21/02
Abstract:
A semiconductor device including a substrate; a trench formed within the substrate; a gate insulating film formed conformally along a portion of a surface of the trench; a gate electrode formed on the gate insulating film and filling a portion of the trench; a capping film formed on the gate electrode and filling the trench; and an air gap formed between the capping film and the gate insulating film.
Public/Granted literature
- US20180145080A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2018-05-24
Information query
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