Invention Grant
- Patent Title: HDR skimming photodiode with true LED flicker mitigation
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Application No.: US15726860Application Date: 2017-10-06
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Publication No.: US10136084B1Publication Date: 2018-11-20
- Inventor: Tharald Andersen Solheim , Johannes Solhusvik
- Applicant: OmniVision Technologies, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H04N5/359
- IPC: H04N5/359 ; H04N5/3745 ; H04N5/355 ; H04N5/353 ; H01L27/146 ; H04N5/235

Abstract:
Apparatuses and methods for a skimming photodiode with high dynamic range (HDR) and reduced Light Emitting Diode (LED) flicker in imaging system are disclosed herein. A voltage generator provides a transfer gate voltage to a transfer transistor. The transfer gate voltage is a voltage selected one of a transfer-on, a transfer-off, and a skimming voltage. The transfer transistor transfers charges generated on a Complementary Metal-Oxide-Semiconductor (CMOS) photodiode (PD) to a floating diffusion (FD). The voltage on transfer gate controls the amount of the charges that can be transferred from the PD to the FD. A reset transistor precharges the PD and FD to an AVDD. A first enable transistor controls the amount of charges transferred from the FD to a first capacitor. A second enable transistor controls the amount of charges transferred from the FD to a second capacitor. The first and second enable transistors receive their individual periodical control pulses once activated. Charges collected on the first and second capacitors are transferred to the FD. A source follower transistor amplifies voltage appeared on the FD. A row select transistor sends the amplified voltage to the bitline for signal readout.
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