- 专利标题： Oxide semiconductor, coating liquid, method of forming oxide semiconductor film, semiconductor element, display element, image display device and image display system
-
申请号： US15401157申请日： 2017-01-09
-
公开(公告)号： US10141185B2公开(公告)日： 2018-11-27
- 发明人: Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
- 申请人： Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
- 申请人地址： JP Tokyo
- 专利权人： RICOH COMPANY, LTD.
- 当前专利权人： RICOH COMPANY, LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Cooper & Dunham LLP
- 优先权： JP2016-003739 20160112
- 主分类号： G09G5/00
- IPC分类号： G09G5/00 ; H01L21/02 ; H01L29/24 ; H01L29/786 ; H01L27/12 ; H01L29/66 ; H01L29/861 ; H01L27/32
摘要：
An oxide semiconductor includes an oxide having a layered structure expressed by an expression of a product of [(AO)(ZO)mi(BO)(ZO)ni]i from i=1 to L. In the product, an atom A is a positive monovalent element, an atom Z is a positive divalent element, an atom B is a positive trivalent element, L is a positive integer, and mi and ni are independent integers greater than or equal to zero. A sum from i=1 to L of (mi+ni) is not zero.
公开/授权文献
信息查询
