Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
-
Application No.: US15304015Application Date: 2014-04-14
-
Publication No.: US10141273B2Publication Date: 2018-11-27
- Inventor: Shinji Watanabe , Tsuyoshi Kida , Yoshihiro Ono , Kentaro Mori , Kenji Sakata , Yusuke Yamada
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn I.P. Law Group, PLLC.
- International Application: PCT/JP2014/060603 WO 20140414
- International Announcement: WO2015/159338 WO 20151022
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L23/31

Abstract:
In a semiconductor device according to an embodiment, a second semiconductor chip is mounted on a first rear surface of a first semiconductor chip. Also, the first rear surface of the first semiconductor chip includes a first region in which a plurality of first rear electrodes electrically connected to the second semiconductor chip via a protrusion electrode are formed and a second region which is located on a peripheral side relative to the first region and in which a first metal pattern is formed. In addition, a protrusion height of the first metal pattern with respect to the first rear surface is smaller than a protrusion height of each of the plurality of first rear electrodes with respect to the first rear surface.
Public/Granted literature
- US20170047296A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-02-16
Information query
IPC分类: