- 专利标题: Thin film transistor and fabrication method thereof, array substrate and fabrication method thereof, display apparatus
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申请号: US15527410申请日: 2016-07-01
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公开(公告)号: US10141423B2公开(公告)日: 2018-11-27
- 发明人: Huibin Guo , Xiaoxiang Zhang , Jing Wang
- 申请人: BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
- 申请人地址: CN Beijing CN Beijing
- 专利权人: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
- 当前专利权人: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Beijing CN Beijing
- 代理机构: Nath, Goldberg & Meyer
- 代理商 Joshua B. Goldberg
- 优先权: CN201610133484 20160309
- 国际申请: PCT/CN2016/088071 WO 20160701
- 国际公布: WO2017/152552 WO 20170914
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L21/027 ; H01L29/786
摘要:
The disclosure provides a thin film transistor (TFT) and a fabrication method thereof, an array substrate and a fabrication method thereof, and a display apparatus. The fabrication method of a TFT includes: forming a protection layer in an area on an active layer between a source electrode and a drain electrode to be formed, forming a source-drain metal layer above the active layer having the protection layer formed thereon, coating a photoresist on the source-drain metal layer, and forming a photoresist reserved area corresponding to areas of the source electrode and the drain electrode to be formed and a photoresist non-reserved area corresponding to the other area; etching off the source-drain metal layer corresponding to the photoresist non-reserved area to form the source and drain electrodes and expose the protection layer above the active layer; and removing the photoresist above the source and drain electrodes and the protection layer.
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