Invention Grant
- Patent Title: Magnetoresistive random-access memory cache write management
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Application No.: US14442093Application Date: 2014-03-28
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Publication No.: US10152410B2Publication Date: 2018-12-11
- Inventor: Yan Solihin
- Applicant: Empire Technology Development LLC
- Applicant Address: US DE Wilmington
- Assignee: Empire Technology Development LLC
- Current Assignee: Empire Technology Development LLC
- Current Assignee Address: US DE Wilmington
- International Application: PCT/US2014/032215 WO 20140328
- International Announcement: WO2015/147868 WO 20151001
- Main IPC: G06F12/08
- IPC: G06F12/08 ; G06F12/02 ; G06F12/0893 ; G06F12/123 ; G06F12/0875 ; G06F12/126

Abstract:
Technologies are generally described manage MRAM cache writes in processors. In some examples, when a write request is received with data to be stored in an MRAM cache, the data may be evaluated to determine whether the data is to be further processed. In response to a determination that the data is to be further processed, the data may be stored in a write cache associated with the MRAM cache. In response to a determination that the data is not to be further processed, the data may be stored in the MRAM cache.
Public/Granted literature
- US20160048447A1 MAGNETORESISTIVE RANDOM-ACCESS MEMORY CACHE WRITE MANAGEMENT Public/Granted day:2016-02-18
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