Invention Grant
- Patent Title: Semiconductor device having isolation structures with different thickness and method of forming the same
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Application No.: US15660107Application Date: 2017-07-26
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Publication No.: US10157770B2Publication Date: 2018-12-18
- Inventor: Cheng-Ta Wu , Chii-Ming Wu , Sen-Hong Syue , Cheng-Po Chau
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/762 ; H01L27/088 ; H01L29/06 ; H01L29/78 ; H01L27/105 ; H01L27/146
Abstract:
A semiconductor device includes a substrate, a first isolation structure, a second isolation structure STI, and semiconductor fins. The first isolation structure is on the substrate and has a first thickness. The second isolation structure abuts the first isolation structure and has a second thickness. The first thickness is different from the second thickness. The semiconductor fins respectively abut the first isolation structure and the second isolation structure.
Public/Granted literature
- US20180151414A1 SEMICONDUCTOR DEVICE HAVING ISOLATION STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2018-05-31
Information query
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