Invention Grant
- Patent Title: Thin film transistor substrate having a plurality of stacked storage capacitors
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Application No.: US15699126Application Date: 2017-09-08
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Publication No.: US10163944B2Publication Date: 2018-12-25
- Inventor: Sohyung Lee , Youngyoung Chang , Kwonshik Park , Mincheol Kim , Jeongsuk Yang
- Applicant: LG DISPLAY CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG DISPLAY CO., LTD.
- Current Assignee: LG DISPLAY CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Dentons US LLP
- Priority: KR10-2015-0087209 20150619
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/32 ; G02F1/13 ; G02F1/1362 ; G02F1/1368 ; G02F1/1343

Abstract:
A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a first TFT including a polycrystalline semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode deposited on a substrate, a second TFT separated from the first TFT, the second TFT including a second gate electrode, an oxide semiconductor layer, a second source electrode, and a second drain electrode deposited on the first gate electrode, and a plurality of storage capacitors separated from the first and second TFTs, each storage capacitor including a first dummy semiconductor layer, a first gate insulating layer on the first dummy semiconductor layer, a first dummy gate electrode on the first gate insulating layer, and an intermediate insulating layer on the first dummy gate electrode.
Public/Granted literature
- US20180012913A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE USING THE SAME Public/Granted day:2018-01-11
Information query
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