Invention Grant
- Patent Title: Method for creating switch reluctance motor memory sensor model
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Application No.: US14762298Application Date: 2013-04-19
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Publication No.: US10164560B2Publication Date: 2018-12-25
- Inventor: Hao Chen , Yan Liang
- Applicant: China University of Mining and Technology
- Applicant Address: CN Xuzhou, Jiangsu
- Assignee: China University of Mining and Technology
- Current Assignee: China University of Mining and Technology
- Current Assignee Address: CN Xuzhou, Jiangsu
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Priority: CN201310033182 20130129
- International Application: PCT/CN2013/074453 WO 20130419
- International Announcement: WO2014/117441 WO 20140807
- Main IPC: H02P25/08
- IPC: H02P25/08 ; G06F17/50

Abstract:
A method for creating a switch reluctance motor memory sensor model. A switch reluctance motor memory sensor circuit model is formed by two current transmitters AD844, an operational amplifier AD826, a memristor, a capacitor, and three resistors. The method for creating a switch reluctance motor memory sensor model enables physical phenomena in a simulation system to be similar to an actual switch reluctance motor system, and is beneficial for direct mathematical simulation of a switch reluctance motor system. The method is simple, can improve static and dynamic performance of a system, and achieves real-time simulation and real-time control of the switch reluctance motor system.
Public/Granted literature
- US20150363529A1 Method for Creating Switch Reluctance Motor Memory Sensor Model Public/Granted day:2015-12-17
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