Method for creating switch reluctance motor memory sensor model

    公开(公告)号:US10164560B2

    公开(公告)日:2018-12-25

    申请号:US14762298

    申请日:2013-04-19

    Inventor: Hao Chen Yan Liang

    Abstract: A method for creating a switch reluctance motor memory sensor model. A switch reluctance motor memory sensor circuit model is formed by two current transmitters AD844, an operational amplifier AD826, a memristor, a capacitor, and three resistors. The method for creating a switch reluctance motor memory sensor model enables physical phenomena in a simulation system to be similar to an actual switch reluctance motor system, and is beneficial for direct mathematical simulation of a switch reluctance motor system. The method is simple, can improve static and dynamic performance of a system, and achieves real-time simulation and real-time control of the switch reluctance motor system.

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