- 专利标题: GOA electric circuit based on LTPS semiconductor thin-film transistors
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申请号: US15308843申请日: 2016-06-13
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公开(公告)号: US10170067B2公开(公告)日: 2019-01-01
- 发明人: Yafeng Li
- 申请人: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 申请人地址: CN Hubei
- 专利权人: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Hubei
- 代理商 Mark M. Friedman
- 优先权: CN201610331102 20160518
- 国际申请: PCT/CN2016/085597 WO 20160613
- 国际公布: WO2017/197683 WO 20171123
- 主分类号: G09G3/36
- IPC分类号: G09G3/36 ; G02F1/1345 ; G02F1/1362 ; G02F1/1368 ; H01L27/12
摘要:
A GOA electric circuit introduces a resistor and a timing signal, which are used to replace a second capacitor in the existing skills. One terminal of the resistor is connected to a constant high voltage level and the other terminal thereof is connected to a gate electrode of a ninth thin-film transistor. A source electrode of the ninth thin-film transistor is electrically connected to the timing signal. In the stage maintaining the output terminal at low voltage level, the voltage level of the second node can be changed between high and low voltage levels as the timing signal is changed, and the voltage level of the second node is pulled down in a specific frequency. This effectively prevents the second node from being at high voltage level for a long time and avoids the problem of threshold voltage shifting, and therefore improves the stability of GOA electric circuit.
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