- 专利标题: Methods for the photo-initiated chemical vapor deposition (PICVD) of coatings and coatings produced by these methods
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申请号: US14786783申请日: 2014-04-17
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公开(公告)号: US10174424B2公开(公告)日: 2019-01-08
- 发明人: Jason Robert Tavares , Christopher Alex Dorval Dion
- 申请人: POLYVALOR, LIMITED PARTNERSHIP
- 申请人地址: CA Montreal
- 专利权人: Polyvalor, Limited Partnership
- 当前专利权人: Polyvalor, Limited Partnership
- 当前专利权人地址: CA Montreal
- 代理商 Isabelle Pelletier
- 国际申请: PCT/CA2014/050389 WO 20140417
- 国际公布: WO2014/172789 WO 20141030
- 主分类号: B32B5/16
- IPC分类号: B32B5/16 ; B05D7/00 ; C23C16/48 ; C23C16/30 ; C23C16/44 ; B05D3/06 ; B05D1/00 ; C09D161/06 ; B22F1/02 ; B22F1/00
摘要:
Methods for producing coatings on substrates are provided. These methods comprise the steps of introducing the substrate in a photo-initiated chemical vapor deposition reactor, introducing a gas precursor in the reactor, irradiating said gas precursor with UV radiation at a given wavelength, thereby at least partly photodissociating the gas precursor, until the coating is formed. In one method, the gas precursor is a mixture comprising carbon monoxide and hydrogen. In another method, the pressure in the react or is between about 0.75 and 1.25 atm and the gas precursor has an absorption cross section of about 5×10−16 cm2/molecule or less at said given wavelength. In another aspect, the substrate is ash.
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