- Patent Title: Image sensor having nano voids and method for fabricating the same
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Application No.: US15437748Application Date: 2017-02-21
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Publication No.: US10181489B2Publication Date: 2019-01-15
- Inventor: Yun-Hui Yang
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0077063 20160621
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
An image sensor includes a plurality of photodiodes formed in a substrate; nano void regions formed in the substrate adjacent to sides of each photodiode of the plurality of photodiodes; and a plurality of nano voids formed in each nano void region of the nano void regions.
Public/Granted literature
- US20170365630A1 IMAGE SENSOR HAVING NANO VOIDS AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-12-21
Information query
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