公开(公告)号：US10147753B2

公开(公告)日：2018-12-04

申请号：US15464631

申请日：2017-03-21

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang ,  Seon-Man Hwang

IPC: H01L27/146

Abstract: A stacked image sensor includes: a lower device including a lower inter-layer dielectric layer over an upper surface of a lower substrate, and a lower capping layer over the lower inter-layer dielectric layer; an upper device stacked over the lower device, including photodiodes in an upper substrate, an upper inter-layer dielectric layer below a lower surface of the upper substrate, and an upper capping layer below the upper inter-layer dielectric layer; and an air gap formed between the lower inter-layer dielectric layer and the upper inter-layer dielectric layer.

公开(公告)号：US09837454B2

公开(公告)日：2017-12-05

申请号：US14992728

申请日：2016-01-11

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang

IPC: H01L27/146 ,  H04N5/365 ,  H04N5/3745

CPC classification number: H01L27/14605 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14645 ,  H04N5/365 ,  H04N5/37457

Abstract: Provided is an image sensor having improved performance. An image sensor in accordance with an embodiment of the present invention including a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each of the plurality of pixels may include: a photoelectric conversion element formed in a substrate; a transfer gate overlapping with a portion of the photoelectric conversion element and formed on the substrate; and a color filter over the photoelectric conversion element, wherein the plurality of pixels include two adjacent pixels which have the same color filter, and wherein one of the two adjacent pixels comprises an incident light control pattern.

公开(公告)号：US10468445B2

公开(公告)日：2019-11-05

申请号：US15972703

申请日：2018-05-07

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang

IPC: H01L27/146

Abstract: This technology relates to an image sensor. The image sensor includes a substrate including a photoelectric transformation element, the substrate includes a first surface and a second surface faced to the first surface; first and second shielding layers overlapped to photoelectric transformation element and formed over the first and second surfaces, respectively; and a third shielding layer surrounding the photoelectric transformation element and contacted to the first and second shielding layers by penetrating the substrate.

公开(公告)号：US09620540B1

公开(公告)日：2017-04-11

申请号：US15019625

申请日：2016-02-09

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang ,  Pyong-Su Kwag ,  Young-Jun Kwon ,  Min-Ki Na ,  Sung-Kun Park ,  Donghyun Woo ,  Cha-Young Lee ,  Ho-Ryeong Lee

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L29/04 ,  H01L29/16 ,  H01L29/511 ,  H01L29/7827

Abstract: An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.

公开(公告)号：US10068937B2

公开(公告)日：2018-09-04

申请号：US15214012

申请日：2016-07-19

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang ,  Sung-Kun Park ,  Pyong-Su Kwag ,  Ho-Ryeong Lee ,  Young-Jun Kwon

IPC: H01L27/146 ,  H01L29/10 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/28 ,  H01L29/786 ,  H01L29/423

Abstract: This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.

公开(公告)号：US09853078B2

公开(公告)日：2017-12-26

申请号：US15280657

申请日：2016-09-29

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang ,  Sung-Bo Hwang ,  Young-Hun Choi

IPC: H01L21/3105 ,  H01L27/146

CPC classification number: H01L27/14632 ,  H01L21/31053 ,  H01L21/31056 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636

Abstract: A wafer level curved image sensor may include a substrate having a central region, a peripheral region, and an edge region, the peripheral region being formed between the central region and the edge region, supporting patterns formed over the substrate, first fixed patterns formed between the supporting patterns, and an image sensing chip formed over the supporting patterns. The supporting patterns and the first fixed patterns, in combination, form a planar lower surface and a concavely-curved upper surface. The image sensing chip has a curved lower surface and a curved upper surface.

公开(公告)号：US09691800B2

公开(公告)日：2017-06-27

申请号：US14818740

申请日：2015-08-05

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang

IPC: H01L27/146 ,  G01J1/44 ,  G01J1/02 ,  G01J1/06 ,  G01J3/02 ,  G01J1/04

CPC classification number: H01L27/14607 ,  G01J1/0209 ,  G01J1/0488 ,  G01J1/06 ,  G01J1/44 ,  G01J3/0208 ,  G01J3/0259 ,  G01J3/0262 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627

Abstract: An image sensor includes a substrate including photoelectric conversion elements for a plurality of unit pixels, which are two-dimensionally arranged in a pixel array; a light transmission member on the substrate; a grid structure in the light transmission member and having multiple layers; and a light collection member on the light transmission member, wherein the grid structure is tilted for respective chief ray angles of the plurality of unit pixels according to locations of the plurality of unit pixels in the pixel array.

公开(公告)号：US10818714B2

公开(公告)日：2020-10-27

申请号：US16219571

申请日：2018-12-13

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor may include an antireflection layer formed over a substrate, grid patterns and a guide pattern that are disposed over the antireflection layer, a color filter between the grid patterns, a phase difference detection filter structured to include a portion between one of the grid patterns and the guide pattern, and a lining layer formed to include a portion between one of the grid patterns and the phase difference detection filter. The lining layer has a refractive index lower than that of the phase difference detection filter.

公开(公告)号：US10181489B2

公开(公告)日：2019-01-15

申请号：US15437748

申请日：2017-02-21

Applicant: SK hynix Inc.

Inventor： Yun-Hui Yang

IPC: H01L27/146

Abstract: An image sensor includes a plurality of photodiodes formed in a substrate; nano void regions formed in the substrate adjacent to sides of each photodiode of the plurality of photodiodes; and a plurality of nano voids formed in each nano void region of the nano void regions.

公开(公告)号：US09992435B2

公开(公告)日：2018-06-05

申请号：US15152339

申请日：2016-05-11

Applicant: SK hynix Inc.

Inventor： Pyong-Su Kwag ,  Sung-Kun Park ,  Yun-Hui Yang

IPC: H04N5/376 ,  H04N5/235 ,  H04N5/335 ,  H04N5/378 ,  H04N5/247 ,  H01L27/146

CPC classification number: H04N5/3765 ,  H04N5/3597

Abstract: An image sensing device includes: a floating diffusion node; an initialization block suitable for initializing the floating diffusion node with a first voltage, based on an initialization control signal; a boosting block suitable for boosting the floating diffusion node with a second voltage, based on a boost control signal; a photodiode suitable for generating a photocharge based on incident light; a transmission block suitable for transmitting the photocharge to the floating diffusion node based on a transmission control signal; and a selection block suitable for generating a pixel signal corresponding to a voltage loaded on the floating diffusion node based on a selection control signal.